Black silicon – correlation between microstructure and Raman scattering-Reference-Cited by-同舟云学术

Black silicon – correlation between microstructure and Raman scattering

Published:2019-09-28 Issue:7 Volume:70 Page:58-64
ISSN:1339-309X
Container-title:Journal of Electrical Engineering
language:en
Short-container-title:

Author:

Jurečka Stanislav¹,Pinčík Emil²,Imamura Kentaro³,Matsumoto Taketoshi³,Kobayashi Hikaru³

Affiliation:

1. Institute of Aurel Stodola , University of Žilina , Liptovský Mikuláš , Slovakia

2. Institute of Physics SAS , Dúbravská cesta 9, 842 28 Bratislava , Slovakia

3. The Institute of Scientific and Industrial Research , Osaka University , CREST, Japan Science and Technology Agency, Ibaraki, Osaka 567-0047 , Japan

Abstract

Abstract Black silicon layers were formed on silicon substrate by the surface structure chemical transfer method and by anodic etching method. Properties of microstructure of formed layers were experimentally studied by the electron microscopy methods (TEM) and characterized by statistical, Fourier and multifractal methods. Theoretical structures with defined fractal properties and surface roughness were generated and their microstructure properties were evaluated. Obtained results were used for the explanation of the real structure development during the forming procedure. By using of this approach, we study the correlation of roughness and fractality with optical properties. Black silicon layers were also investigated by using of Raman scattering method. Optimized theoretical model describing the 1st order of black Si Raman scattering profile was constructed and used for evaluation of the biaxial tensile stress introduced during etching procedure.

Publisher

Walter de Gruyter GmbH

Link

https://www.sciendo.com/pdf/10.2478/jee-2019-0042

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