A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics-Reference-Cited by-同舟云学术

A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics

Published:2019-06-01 Issue:3 Volume:70 Page:227-235
ISSN:1339-309X
Container-title:Journal of Electrical Engineering
language:en
Short-container-title:

Author:

Haze Jiri¹,Hofman Jiri¹

Affiliation:

1. Brno University of Technology , Technicka 8, Brno , Czech Republic

Abstract

Abstract The paper discusses a novel temperature controller and a related test method allowing in-situ measurement of total ionising dose-induced changes in the impact of temperature on electronic devices for space applications. Various results of pilot radiation experiments (testing commercial PMOS transistors, RADFETs, and voltage references) are also presented.

Publisher

Walter de Gruyter GmbH

Link

https://www.sciendo.com/pdf/10.2478/jee-2019-0031

Reference28 articles.

1. [1] T. P. Ma and P. V. Dressendorfer, “Ionizing radiation effects in MOS devices circuits”, 1/E, New York: Wiley-Interscience, 1989.

2. [2] A. Holmes-Siedle and L. Adams, “Handbook of radiation effects”, 2/E, Oxford: Oxford University Press, 2002.

3. [3] A. Holmes-Siedle, F. Ravotti, and M. Glaser, “The dosimetric performance of RADFETs in radiation test beams”, Proceedings of IEEE Radiation Effects Data Workshop, pp. 42–57.

4. [4] G. Sarrabayrouse and S. Siskos, “Behaviour of High Sensitivity MOS Radiation Dosimeters Biased in the MTC Current Region”, Proceedings of the 9th WSEAS Int. Conference on Instrumentation Measurement, Circuits Systems, pp. 38–41, 2010.

5. [5] A. Haran, A. Jaksic, N. Refach, A. Eliyahu, D. David, and J. Barak, “Temperature Effects Long Term Fading of Implanted Un-Implanted Gate Oxide RADFETs”, Proceedings of the 7th European Conference on Radiation and Its Effects on Components Systems (RADECS), pp. 465–469, 2003.