Modeling Epitaxial Layer Growth from Gas Phase for Analysis of Influence of Changing Technological Process with Variation in Growth Zone Heating
Author:
Affiliation:
1. Nizhny Novgorod State University , 23 Gagarin Avenue , Nizhny Novgorod , Russia
2. Nizhny Novgorod State Technical University , 24 Minin Street , Nizhny Novgorod , Russia
Abstract
Publisher
Walter de Gruyter GmbH
Link
https://www.sciendo.com/pdf/10.2478/amst-2021-0003
Reference22 articles.
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3. V.I. LACHIN, N.S. SAVELOV: Electronics. Phenics, Rostov-on-Don, 2001.
4. A.A. VOROB’EV, V.V. KORABL’EV, S.YU. KARPOV: The use of magnesium to dope gallium nitride obtained by molecular-beam epitaxy from activated nitrogen. Semiconductors, 37(7) (2003) 838–842.
5. L.M. SOROKIN, et al.: Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy. Techn. Phys. Lett., 34(11) (2008) 992–994.
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