Multiplicative topological descriptors of Silicon carbide-Reference-Cited by-同舟云学术

Multiplicative topological descriptors of Silicon carbide

Published:2019-01-01 Issue:1 Volume:4 Page:181-190
ISSN:2444-8656
Container-title:Applied Mathematics and Nonlinear Sciences
language:en
Short-container-title:

Author:

Virk Abaid ur Rehman¹,Abbas Tanveer²,Khalid Wasim³

Affiliation:

1. Department of Mathematics, University of Management and Technology , Lahore 54000 , Pakistan

2. Department of Mathematics, Minhaj University , Lahore Pakistan

3. Department of Mathematics, University of Lahore (Pakpattan Campus) , Lahore Pakistan

Abstract

Abstract Topological indices helps us to collect information about algebraic graphs and gives us mathematical approach to understand the properties of chemical structures. In this paper, we aim to compute multiplicative degree-based topological indices of Silicon-Carbon Si 2 C 3 −III[p,q] and SiC 3 −III[p,q] .

Publisher

Walter de Gruyter GmbH

Subject

Applied Mathematics,Engineering (miscellaneous),Modeling and Simulation,General Computer Science

Link

https://www.sciendo.com/pdf/10.2478/AMNS.2019.1.00018

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