A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

Author:

Sedrati C.1,Bouabellou A.2,Kabir A.3,Haddad R.2,Boudissa M.4,Taabouche A.2,Fiad H.2,Hammoudi A.5

Affiliation:

1. Ecole Nationale Polytechnique de Constantine - Malek BENNABI - Constantine , Algeria

2. Laboratoire Couches Minces et Interfaces , Université Frères mentouri Constantine , Route Ain El Bey , Constantine , Algeria

3. Laboratory of Research on the Physic-Chemical of Surfaces and Interfaces , Université 20 août 1955-Skikda , Route d’El Hadaiek, 21000 Skikda , Algeria

4. Laboratory for the Elaboration of New Materials and their Characteristics , Université de Sétif , Sétif 19000 , Algeria

5. Nuclear Research Center of Algiers , 16000 , Algeria

Abstract

Abstract In this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and sheet resistance measurement. The XRD and Raman spectroscopy results showed that the formation of nickel and cobalt silicides (CoSi, Co2Si, Ni2Si, NiSi, NiSi2, CoSi2) is an annealing temperature dependent diffusion process. The diffusion phenomenon was evidenced by RBS. The low values of the sheet resistance which were correlated with the films surface roughness were attributed to the formation of both CoSi and NiSi phases.

Publisher

Walter de Gruyter GmbH

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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