Study on synthesis and photoelectric properties of AgInS2 quantum dots

Author:

Yuan Binxia1,Luo Zige1,Sun Yongjun1,Cao Sheng2,Cao Lan1,Li Min1

Affiliation:

1. College of Energy and Mechanical Engineering , Shanghai University of Electric Power , Shanghai , , China

2. Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials , Guangxi University , Nanning , , China

Abstract

Abstract AgInS2 Quantum dots (AIS QDs) have high quantum yield and catalytic performance, which is promising materials in photo-catalytic and optoelectronic fields. In the paper, it adopted a simple and non-toxic method to synthesize AIS QDs. The effect of reaction temperature on the growth mechanism, optical and physical properties of AIS had been extensively investigated by using L-cysteine as the sulfur source, and their application in catalytic hydrogen production was also studied. The results demonstrated that the fluorescence properties will be quenched with the increase of temperature, indicating that the separation speed of electron hole pairs of samples obtained at higher temperature was faster. Meantime, the electron transport capacity and the photocurrent had also improved with the increase of reaction temperature. Finally, the sample obtained at 100 oC had higher hydrogen production rate.

Publisher

Walter de Gruyter GmbH

Subject

General Chemical Engineering,General Chemistry,Biotechnology

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