High voltage low quiescent current LDO with self-regulation impedance buffer-Reference-Cited by-同舟云学术

High voltage low quiescent current LDO with self-regulation impedance buffer

Published:2023-04-01 Issue:2 Volume:74 Page:109-115
ISSN:1339-309X
Container-title:Journal of Electrical Engineering
language:en
Short-container-title:

Author:

Tian Lei¹,Chen Zhong²,Li Qinqin¹,Wang Weiheng³

Affiliation:

1. 1 School of Electronic Engineering , Xi’an University of Posts and Telecommunications , Xi’an , , China

2. 2 Department of Electrical Engineering , University of Arkansas , Arkansas , , USA

3. 3 Institution Sup Galil´ ee , Universit´ e Paris 13 , Villetaneuse, Paris, 75001 , France

Abstract

Abstract To improve the whole characteristic of the LDO, a low quiescent current structure of high voltage LDO with self-regulation impedance buffer and bandgap amplifier is presented in this paper. With the bandgap amplifier proposed, the function of voltage reference and error amplifier can be achieved simultaneously, which can efficiently reduce the consumption. The load capacitor can be as small as 0.47µF by using the self-regulation impedance buffer and current buffer compensation scheme. The LDO has been implemented in a 0.18 µm process with die size 0.03 mm2 . Without the load, the consumption quiescent current of the LDO is 1 µA. Experimental result shows that the overshoot and undershoot of line transient response are less than 30 mV/V. The load regulation is about 0.1A, and line regulation is about 0.07 mV/V at no load condition.

Publisher

Walter de Gruyter GmbH

Link

https://www.sciendo.com/pdf/10.2478/jee-2023-0014

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