Author:
Isaiev M.,Kuryliuk V.,Kuzmich A.,Burbelo R.
Abstract
Abstract
In this paper photothermal transformation in semiconductor structures with modified properties of subsurface layer under its irradiation by pulse laser (~10 ns) radiation was analyzed. It was show that the presence of this surface modified layer leads to increasing of surface temperature in comparison with homogeneous case. Moreover, this increasing could even compensate the temperature decreasing induced by thermal source redistribution caused by charge carrier diffusion.
Cited by
7 articles.
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