Reactive Magnetron Sputtering Control Based on an Analytical Condition of Stoichiometry

Author:

Madarász Róbert Rossi1,Kelemen András2ORCID

Affiliation:

1. 1 Doctoral School of Applied Mathematics and Applied Informatics , John von Neumann Faculty, Óbuda University , Budapest

2. 2 Department of Electrical Engineering, Faculty of Technical and Human Sciences , Sapientia-Hungarian University of Transylvania , Tg. Mureş

Abstract

Abstract The conditions for stoichiometric thin film deposition by reactive magnetron sputtering include the existence of a given ratio between the flux of the sputtered metallic atoms and the flux of the reactive gas molecules on the surface of the substrate. To meet this condition, a relationship based on the Berg model is formulated between the partial pressure of the reactive gas, the target coverage, and the sputtering current density. Given that the target coverage can be estimated online from the sputtering voltage, it is possible to create a control structure where the reactive gas partial pressure is controlled to obtain stoichiometric thin film deposition. Simulation results are presented based on the dynamic model of the sputtering process.

Publisher

Walter de Gruyter GmbH

Subject

Polymers and Plastics,General Environmental Science

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