Far Field Measurements of Phc Led Prepared by E–Beam Lithography-Reference-Cited by-同舟云学术

Far Field Measurements of Phc Led Prepared by E–Beam Lithography

Published:2014-09-01 Issue:5 Volume:65 Page:309-312
ISSN:1339-309X
Container-title:Journal of Electrical Engineering
language:en
Short-container-title:

Author:

Hronec Pavol¹,Škriniarová Jaroslava¹,Benčurová Anna²,Nemec Pavol²,Pudiš Dušan³,Kováč Jaroslav¹

Affiliation:

1. Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava, Ilkovičova 3, 812 19 Bratislava, Slovakia

2. Institute of Informatics, Slovak Academy of Sciences, Dúbravská cesta 9, 845 07 Bratislava, Slovakia

3. Dept. of Physics, Faculty of Electrical Engineering, University of Zilina, Univerzitná 1, 010 26 ˇ Zilina, Slovakia

Abstract

Abstract The paper deals with optical characterization of the Al0.295Ga0.705As/GaAs multi-quantum well light emitting diode (LED) structure with photonic crystal (2D PhC) patterned on the top of the structure using Electron Beam Direct Write Lithography (EBDWL). Light-current characteristics measured by integrating sphere shows increase of extracted light intensity as 21.1%. Additionally, extracted light intensity was studied by far-field measurements as a complementary method to light-current characteristics. The far-field measurements show increase of extracted light intensity as 31.2%. We suggest this method as more suitable for evaluation of extracted light intensity because it omits emission from edges of the LED and thus light is measured only from the area where PhC is patterned

Publisher

Walter de Gruyter GmbH

Link

https://www.sciendo.com/pdf/10.2478/jee-2014-0050