Author:
Racko Juraj,Mikolášek Miroslav,Granzner Ralf,Breza Juraj,Donoval Daniel,Grmanová Alena,Harmatha Ladislav,Schwierz Frank,Fröhlich Karol
Abstract
AbstractA new model is presented of current transport in Metal Insulator Metal (MIM) structures by quantum mechanical tunnelling. In addition to direct tunnelling through an insulating layer, tunnelling via defects present in the insulating layer plays an important role. Examples of the influence of the material and thickness of the insulating layer, energy distribution of traps, and metal work functions are also provided.
Subject
General Physics and Astronomy
Reference15 articles.
1. J. Frenkel, Phys. Rev. 54, 647 (1938)
2. S.M. Sze, J. Appl. Phys. 38, 2951 (1967)
3. S.M. Sze, Physics of Semiconductors Devices, second edition (John Wiley & Sons, New York, 1981)
4. A. Schenk, Solid State Electron. 35, 1585 (1992)
5. G.A.M. Hurkx, D.B.M. Klaassen, M.P.G. Knuvers, IEEE T. Electron Dev. 39, 331 (1992)
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