Abstract
AbstractDirect detection THz/sub-THz bolometer is proposed. In it an electromagnetic wave propagates in the bipolar semiconductor waveguide, heats electrons and holes there, and therefore creates their bipolar thermodiffusion flow and, as well as, the electromotive force (emf). The flow causes the carrier excess concentration. Both this concentration and emf are used to get the bolometer response voltage. The bolometer theoretical model is developed. The possibility without cooling or moderate cooling (about 100 K for the Cd0.2Hg0.8Te bolometers) to get acceptable for applications values of the noise equivalent power is shown. Experimental results confirm the main model conclusions.
Subject
Electrical and Electronic Engineering,Radiation,General Materials Science
Reference8 articles.
1. Characteristics of high sensitivity Ge bolometer;Nakagawa;Appl Phys,1970
2. Active millimeter wave im aging for concealed weapons detection;Grossman;Proc SPIE,2003
3. Il inskaya Highly sensitive submillimeter InSb photodetectors;Vasilyev;Semiconductors,2008
4. Detection of millimetre and sub millimetre wave radiation by free carrier absorption in a semiconductor;Kinch;Appl Phys,1963
5. uillet Beranger and Plasma wave detection of terahertz radiation by sili con field effects transistors : Responsivity and noise equiva lent power;Tauk;Appl Phys Lett,2006
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