Author:
Izhnin I.,Izhnin A.,Savytskyy H.,Fitsych O.,Mikhailov N.,Varavin V.,Dvoretsky S.,Sidorov Yu.,Mynbaev K.
Abstract
AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.
Subject
Electrical and Electronic Engineering,Radiation,General Materials Science
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