Author:
Ab Rahman M.S.,Hassan M.R.
Abstract
AbstractTemperature dependence of the turn-on time delay (ton) of uncooled semiconductor laser diodes biased below and above threshold is analyzed in presence of data pattern effect. We show that even when the laser is biased at or slightly above threshold, the increase in temperature of operation will lead to increase in the threshold carrier (Nth) and consequently the laser diode will be biased below the threshold again and a significant value of ton will be produced. Thus, knowledge about a value of dc-bias current required to achieve zero ton within wide range of temperature degrees is important when considering uncooled laser diode in high-speed optical communication systems. The temperature dependence of ton is calculated according to the temperature dependence of Nth and Auger recombination coefficient (C) and not by the well-know exponentional relationship of threshold current with temperature. The temperature dependence of Nth is calculated according to the temperature dependence of laser cavity parameters. Advanced analytical model is derived in term of carrier density, recombination coefficients and the injection current (Iinj). The validity of proposed model is confirmed by a numerical method. In addition, approximated models are included where under specified assumptions the proposed model reduces to the well-known approximate models of ton. According to our typical values and at a specified value of modulation current, the dc-bias one (Iib) should be increased from Iib = Ith to Iib ≈ 1.25 and 1.5Ith in order to achieve approximately zero ton when the temperature increases from 25°C to 55°C and 85°C, respectively.
Subject
Electrical and Electronic Engineering,Radiation,General Materials Science
Reference7 articles.
1. Effects of lateral dif fusion on temperature sensitivity of the threshold current for μm double quantum well GaInNAs GaInNAs GaAs la sers;Adolfsson;IEEE J Quantum Elect,2008
2. Theoreti cal calculation of turn on delay time of VCSEL and effect of carriers recombination;Zhang;Laser Technol,2007
3. Electro opto thermal modelling of threshold current dependence on temperature;Ellis;IEEE Top Quant,1997
4. Laser optimisation for dispersion supported transmission systems;Morgado;IEE electron,2005
5. Ultrlow power optical intercon nect with zero biased ultralow threshold laser how low a threshold is low enough ?;Curter;IEEE Photonic Tech Left,1995
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献