Abstract
AbstractIn this paper, simulation studies on an N+-InAs0.61Sb0.13P0.26/n0-InAs0.97Sb0.03/P+-InAs0.61Sb0.13P0.26 double heterostructure laser diode suitable for use as a source in a free space optical communication system at 3.7 μm at room temperature has been presented. The device structure has been characterized in terms of energy band diagram, electric field profile, and carrier concentration profile using ATLAS simulation tool from Silvaco. The current-voltage characteristics of the structure have been estimated taking into account the degeneracy effect. The results of simulation have been validated by the reported experimental results.
Subject
Electrical and Electronic Engineering,Radiation,General Materials Science
Reference5 articles.
1. InAsSbP double heterostructure lasers emitting at μm Part;Danilova;Semiconductors,2000
2. Liquid phase epitaxial growth of InAsxSbyP y layers on InAs;Gertner;Electron Mater,1977
3. Development of room tempera ture LED and lasers for the mid infrared spectral region;Krier;Phys Stat,2008
4. Type I InSb based mid infrared diode lasers;Ashley;Phil Trans,2001
5. Optical communications in the mid wave IR spectral band Fiber;Narasimha Prasad;Opt Commun Rep,2005
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献