Concept of epitaxial silicon structures for edge illuminated solar cells-Reference-Cited by-同舟云学术

Concept of epitaxial silicon structures for edge illuminated solar cells

Published:2011-01-01 Issue:4 Volume:19 Page:
ISSN:1896-3757
Container-title:Opto-Electronics Review
language:
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Author:

Sarnecki J.,Gawlik G.,Teodorczyk M.,Jeremiasz O.,Kozłowski R.,Lipiński D.,Krzyżak K.,Brzozowski A.

Abstract

AbstractA new concept of edge illuminated solar cells (EISC) based on silicon epitaxial technique has been proposed. In this kind of photovoltaic (PV) devices, sun-light illuminates directly a p-n junction through the edge of the structure which is perpendicular to junction surface. The main motivation of the presented work is preparation of a working model of an edge-illuminated silicon epitaxial solar cell sufficient to cooperation with a luminescent solar concentrator (LSC) consisted of a polymer foil doped with a luminescent material. The technological processes affecting the cell I–V characteristic and PV parameters are considered.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Radiation,General Materials Science

Link

http://www.springerlink.com/index/pdf/10.2478/s11772-011-0047-x

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