Quasistationary current contributions in electronic devices-Reference-Cited by-同舟云学术

Quasistationary current contributions in electronic devices

Published:2007-01-01 Issue:1 Volume:15 Page:
ISSN:1896-3757
Container-title:Opto-Electronics Review
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Author:

Neyts K.,Beeckman J.,Beunis F.

Abstract

AbstractIn an electronic device, the current supplied to the electrodes is related to different types of processes inside the device: current density, change in spontaneous polarization, and change in dielectric properties. Two expressions for the electrode current are derived: one is based on the time derivative of the Shockley-Ramo theorem, the other on the time derivative of the dielectric tensor. This result is illustrated for a switching liquid crystal device and a two-dimensional flux tube.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Radiation,General Materials Science

Reference9 articles.

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3. Z. He, “Review of the Shockley-Ramo theorem and its application in semiconductor gamma-ray detectors”, Nuclear Instruments and Methods in Physics Research A463, 250–267 (2001).

4. K. Sato, M. Takahashi, H. Tarano, H. Hashimoto, Y. Niikura, T. Matsumoto, and P. Rutchanaphit, “Generalization of Ramo’s theorem and its application to semiconducting materials”, Jpn. J. Appl. Phys. 34, 2057–2061 (1995).

5. H. Zhang, H. Pauwels, D. Parghi, and G. Heppke, “Observations on ionic contamination in AFLC mixtures”, Molecular Crystals and Liquid Crystals 368, 145–155 (2001).

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