Structural, Chemical and Optical Properties of Pure and Al-Doped Zno Thin Films Derived by Sol–Gel Dip Coating Process

Author:

Kadari Ali sadek12,Ech-Chergui Abdelkader Nebatti32,Mohamedi Mohamed walid3,Zoukel Abdelhalim4,Sabrina Tair3,Mehdi Adjdir5,Driss-Khodja Kouider12,Amrani Bouhalouane12

Affiliation:

1. Electron Microscopy Center, Faculty of Exact and Applied Sciences , University of Oran1 Ahmed Ben Bella , Oran , Algeria

2. Laboratory of Theory and Simulation of Materials , Faculty of Exact and Applied Sciences, University of Oran1 Ahmed Ben Bella , Oran , Algeria

3. Laboratory of Materials Sciences and Applications (LSMA) , University of AinTemouchent Belhadj Bouchaib , faculty of sciences and technology , Algeria

4. Platform of Physico-Chemical Analysis (PTAPC-Laghouat-CRAPC) , Laghouat , Algeria

5. Applied Organic Synthesis Laboratory , Faculty of Exact and Applied Sciences, University Oran1 Ahmed Ben Bella , BP 1524 El M’Naouer, 31000 , Oran , Algeria

Abstract

Abstract Pure and Al-doped ZnO thin films were successfully deposited with sol-gel dip coating on both substrates Si (100) and glass. The structural, chemical, morphological and optical properties as a function of the annealing temperature and dopant atomic concentration were investigated by means of X-ray diffraction, Energy dispersive X-ray, Scanning Electron Microscopy, and spectrophotometry. All the pure and doped films show a polycrystalline nature and hexagonal in structure. Accurate doping was proven by EDX. In addition, the SEM analysis revealed that the films possess uniform distribution throughout the surface and the grain dimension decreases with Al doping. From the transmittance measurements, it is see that all films are over 55% in the visible region and the band gap energy increases from 3.28 to 3.45 eV with the increase of Al concentration.

Publisher

Walter de Gruyter GmbH

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