Mechanical and Thermal Behavior of Semiconducting Cadmium Oxide at High-Pressure

Author:

Bioud N.12,Benchiheub N.13

Affiliation:

1. Faculty of Sciences and Technology , University Mohamed El Bachir El Ibrahimi of Bordj Bou Arreridj , 34000 Bordj Bou Arreridj , Algeria

2. Laboratoire d’Optoélectronique et Composants (LOEC), Faculté des sciences , Université Ferhat Abbas de Sétif 1 , Sétif , Algérie

3. Laboratory of Materials Physics, Radiation and Nanostructures (LPMRN) , University Mohamed El Bachir El Ibrahimi of Bordj Bou Arreridj , Bordj Bou Arreridj , Algeria

Abstract

Abstract The effect of high pressures on the mechanical and thermal properties up to phase transition pressure for cubic rock-salt cadmium oxide (CdO) semiconducting compound is presented in this research. The calculations are based on the equation of state (EOS) parameters measured at ambient conditions reported in the literature. The approach used here was previously applied successfully for other materials. Our study shows that the parameters reflect the rigidity of the semiconductor and the melting temperature increases with increasing pressure, while some other parameters decrease gradually for our material of interest. A comparative analysis of some quantities for CdO compound under high pressure was done. Similar behaviors were observed in the literature for particular materials with particular structures. Furthermore, we calculated both the fracture toughness and the fracture surface energy, which are at around 1.23 MPa.m1/2 and 5.14 J.m−2, respectively.

Publisher

Walter de Gruyter GmbH

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