Thin Vanadium Dioxide Films for Use in Microwave Keys with Electric Control

Abstract

Introduction. In view of the ever-tightening bandwidth requirements for wireless communication systems, the use of tunable or switching devices based on microwave keys is becoming increasingly popular. Currently, the development of microwave keys based on nonlinear materials, such as vanadium dioxide, is a relevant research direction. The keys based on this material are distinguished by a planar and simple design, thus being suitable for creating microwave devices using hybrid technology.Aim. To study the properties of thin vanadium dioxide films and to develop a microwave switch with electrical switching on their basis.Materials and methods. Experimental samples of thin vanadium dioxide films were obtained by magnetron sputtering. The phase transition parameters of the samples obtained experimentally were used in computer simulation of a planar two-electrode structure of a microwave key by the finite element method.Results. Experimental samples of vanadium dioxide films were manufactured, and the dependences of their resistivity on temperature were studied. The resistance of the obtained vanadium dioxide films was found to change threefold. A microwave key design based on vanadium dioxide films was developed. The formation of a currentconducting channel in vanadium dioxide films was simulated when a control voltage was applied. The threshold voltage of the element was estimated depending on its design parameters.Conclusion. The use of experimental data as a basis for computer simulation made it possible to determine the threshold values of currents depending on the topology and design of the proposed microwave key. The results of simulating the key structure showed the formed conductive channel to have clearly defined boundaries in terms of distribution of both current density and temperature across the film surface.