1. Additivity between sSOI- and CESL-induced nMOSFETs performance boosts;Andrieu,2007
2. 25nm short and narrow strained FDSOI with TiN/HfO2 gate stack;Andrieu,2006
3. Co-integrated dual strained channel on fully depleted sSDOI CMOSFETs with HfO2/TiN gate stack down to 15nm gate length;Andrieu,2005
4. Comparative scalability of PVD and CVD TiN on HfO2 as a metal gate stack for FDSOI cMOSFETs down to 25nm gate length and width;Andrieu,2006
5. Low leakage and low variability ultra-thin body and buried oxide (UT2B) SOI technology for 20nm low power CMOS and beyond;Andríeu,2010