Silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies-Reference-Cited by-同舟云学术

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Silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies

Published:2011 Issue: Volume: Page:473-498
ISSN:
Container-title:Silicon–Germanium (SiGe) Nanostructures
language:
Short-container-title:

Author:

Washio K.

Publisher

Elsevier

Link

http://woodhead.metapress.com/index/W02236U8657543W7.pdf

Reference50 articles.

1. SiGe HBT and BiCMOS technologies for optical transmission and wireless communication systems;Washio;IEEE Transactions on Electron Devices,2003

2. An equilibrium model for buried SiGe strained layers;Fischer;Solid-State Electronics,2000

3. Elimination of misfit dislocations in Si1−xGex/Si heterostructures by limited-area molecular-beam epitaxial growth;Nishida;Journal of Applied Physics,1992

4. Si1−xGex selective epitaxial growth for ultra-high-speed self-aligned HBTs;Oda;Thin Solid Films,2000

5. Boron diffusion in Si and Si1−xGex;Kuo;Materials Research Society Symposium,1995

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