Transport properties of silicon/silicon–germanium (Si/SiGe) nanostructures at low temperatures-Reference-Cited by-同舟云学术

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Transport properties of silicon/silicon–germanium (Si/SiGe) nanostructures at low temperatures

Published:2011 Issue: Volume: Page:361-398
ISSN:
Container-title:Silicon–Germanium (SiGe) Nanostructures
language:
Short-container-title:

Author:

Gold A.

Publisher

Elsevier

Link

http://woodhead.metapress.com/index/G21H4348J6471NL6.pdf

Reference90 articles.

1. Electronic properties of two-dimensional systems;Ando;Review of Modern Physics,1982

2. Simple-layered high mobility field effect heterostructured two-dimensional electron device;Willett;Applied Physics Letters,2006

3. Peak mobility of silicon metal-oxide semiconductor systems;Gold;Physical Review Letters,1985

4. Strain induced two-dimensional electron gas in selectively doped Si/SixGe1−x superlattices;Abstreiter;Physical Review Letters,1985

5. Electronic transport properties of a two-dimensional electron gas in a silicon quantum well at low temperature;Gold;Physical Review B,1987

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