Wet chemical nitridation of (100)GaAs surface: Effect on electrical parameters of surface-barrier Au-Ti/GaAs structures-Reference-Cited by-同舟云学术

Wet chemical nitridation of (100)GaAs surface: Effect on electrical parameters of surface-barrier Au-Ti/GaAs structures

Published:2003-08 Issue:8 Volume:37 Page:931-935
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

L’vova T. V.,Berkovits V. L.,Dunaevskii M. S.,Lantratov V. M.,Makarenko I. V.,Ulin V. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1601661.pdf

Reference10 articles.

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3. Yu. A. Berashevich, A. L. Danilyuk, A. N. Kholod, and V. E. Borisenko, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 91 (2002) [Semiconductors 36, 85 (2002)].

4. N. Braslau, J. Vac. Sci. Technol. A 4, 3085 (1986).

5. V. L. Berkovits, V. P. Ulin, M. Losurdo, et al., Appl. Phys. Lett. 80, 3739 (2002).

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