Macroscopic ion traps at the silicon-oxide interface-Reference-Cited by-同舟云学术

Macroscopic ion traps at the silicon-oxide interface

Published:1998-12 Issue:12 Volume:32 Page:1284-1288
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Dmitriev S. G.,Markin Yu. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187615.pdf

Reference18 articles.

1. A. P. Baraban, V. V. Bulavinov, and P. P. Konorov, Electronics of SiO2 Layers on Silicon [in Russian], Izd. LGU, Leningrad (1988).

2. V. N. Vertoprakhov, B. M. Kuchumov, and E. G. Sal’man, Structure and Properties of Si/SiO2/M Structures [in Russian], Nauka, Sib. Otd., Novosibirsk (1981).

3. T. W. Hickmott, J. Appl. Phys. 46, 2583 (1975).

4. P. K. Nauta and M. W. Hillen, J. Appl. Phys. 49, 2862 (1978).

5. M. R. Boudry and J. P. Stagg, J. Appl. Phys. 50, 942 (1979).

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