Study of PbTe photodiodes on a buffer sublayer of porous silicon-Reference-Cited by-同舟云学术

Study of PbTe photodiodes on a buffer sublayer of porous silicon

Published:1997-01 Issue:1 Volume:31 Page:76-77
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Belyakov L. V.,Zakharova I. B.,Zubkova T. I.,Musikhin S. F.,Rykov S. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187087.pdf

Reference4 articles.

1. V. L. Bondarenko, N. N. Voronov, V. V. Dikarev, A. M. Dorofeev, V. I. Levchenko, L. I. Postnova, and G. N. Troyankov, Tech. Phys. Lett. 20, 51 (1994).

2. Z. M. Dashevskii and M. P. Rudenko, Fiz. Tekh. Poluprovodn. 27, 662 (1993) [Semiconductors 27, 366 (1993)].

3. I. B. Zakharova, T. I. Zubkova, S. A. Nemov, O. V. Rabizo, and V. N. Vydrik, Fiz. Tekh. Poluprovodn. 28, 1802 (1994) [Semiconductors 28, 998 (1994)].

4. I. A. Abroyan, V. Z. Aliev, S. D. Imamkuliev, S. A. Kaz’min, V. I. Kaidanov, G. D. Kasamanli, and A. V. Suvorov, Fiz. Tekh. Poluprovodn. 17, 611 (1983) [Sov. Phys. Semicond. 17, 381 (1983)].

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