Simulation of heat and mass transfer during growth of silicon carbide single crystals-Reference-Cited by-同舟云学术

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Simulation of heat and mass transfer during growth of silicon carbide single crystals

Published:1997-07 Issue:7 Volume:31 Page:672-676
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kirillov B. A.,Bakin A. S.,Tairov Yu. M.,Solnyshkin S. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187063.pdf

Reference12 articles.

1. Yu. M. Tairov and V. F. Tsvetkov, J. Cryst. Growth, 52, 146 (1981).

2. Yu. M. Tairov and V. F. Tsvetkov, in Crystal Growth and Characterization of Polytype Structures, edited by P. Krishna, Pergamon Press, N. Y., 1983, Vol. 7. p. 111.

3. Crystals: Growth, Properties, and Applications;Yu. M. Tairov,1984

4. D. Hofmann, M. Heinze, A. Winnacker, F. Durst, and L. Kadinski et al., J. Cryst. Growth 146, 214 (1995).

5. F. Raikhel’, Yu. M. Tairov, M. G. Travadzhyan, and V. F. Tsvetkov, Izv. Akad. Nauk SSSR, Neorg. Mater. 16, 1011 (1980).

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1. SiC HOMOEPITAXY AND HETEROEPITAXY;International Journal of High Speed Electronics and Systems;2005-12

2. Transport effects in the sublimation growth of aluminum nitride;Journal of Crystal Growth;2000-12

3. Stress and misoriented area formation under large silicon carbide boule growth;Journal of Crystal Growth;1999-03

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