1. B. E. McNeal, G. R. Pulliam, J. J. Fernandez de Castro, and P. M. Warren, IEEE Trans. Magn. MAG-19(5), 1766 (1983).
2. V. V. Randoshkin, A. M. Saletskii, N. N. Sysoev, and A. Ya. Chervonenkis, Mikroélektronika 30(3), 91 (2001).
3. A. F. Martynov, L. V. Nikolaev, V. V. Randoshkin, et al., Pis’ma Zh. Tekh. Fiz. 6(13), 786 (1980) [Sov. Tech. Phys. Lett. 6, 338 (1980)].
4. V. V. Randoshkin, A. M. Balbashov, Yu. A. Durasova, et al., Fiz. Tverd. Tela (Leningrad) 23(8), 2520 (1981) [Sov. Phys. Solid State 23, 1480 (1981)].
5. V. N. Dudorov, M. V. Logunov, and V. V. Randoshkin, Fiz. Tverd. Tela (Leningrad) 28(5), 1549 (1986) [Sov. Phys. Solid State 28, 877 (1986)].