Liquid phase epitaxy of Ge1−x Snx semiconductor films-Reference-Cited by-同舟云学术

Liquid phase epitaxy of Ge1−x Snx semiconductor films

Published:2001-08 Issue:8 Volume:27 Page:698-700
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Saidov A. S.,Razzakov A. Sh.,Koshchanov É. A.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1398973.pdf

Reference3 articles.

1. V. M. Andreev, L. M. Dolginov, and D. N. Tret’yakov, Liquid-Phase Epitaxy in the Technology of Semiconductor Devices (Sov. Radio, Moscow, 1975), p. 328.

2. A. S. Saidov, É. A. Koshchanov, A. Sh. Razzakov, et al., Uzb. Fiz. Zh., No. 1, 16 (1997).

3. A. S. Saidov, É. A. Koshchanov, and A. Sh. Razzakov, Pis’ma Zh. Tekh. Fiz. 24(2), 12 (1998) [Tech. Phys. Lett. 24, 47 (1998)].

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