Oscillatory “reactions” involving the oxygen and carbon background impurities in silicon undergoing heat treatment-Reference-Cited by-同舟云学术

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Oscillatory “reactions” involving the oxygen and carbon background impurities in silicon undergoing heat treatment

Published:2001-05 Issue:5 Volume:35 Page:491-498
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Lukjanitsa V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1371608.pdf

Reference25 articles.

1. V. V. Voronkov, G. I. Voronkova, B. V. Zubov, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 13, 846 (1979) [Sov. Phys. Semicond. 13, 498 (1979)].

2. R. F. Vitman, N. A. Vitovskii, A. A. Lebedev, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 24, 45 (1990) [Sov. Phys. Semicond. 24, 27 (1990)].

3. A. N. Buzynin, S. E. Zabolotskii, V. N. Kalinushkin, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 24, 264 (1990) [Sov. Phys. Semicond. 24, 161 (1990)].

4. I. I. Kolkovskii, P. F. Lugakov, V. V. Lukjanitsa, and V. V. Shusha, Phys. Status Solidi A 118, 65 (1990).

5. V. V. Emtsev, G. A. Oganesyan, and K. Schmalz, Fiz. Tekh. Poluprovodn. (St. Petersburg) 27, 1549 (1993) [Semiconductors 27, 856 (1993)].

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1. Energy levels of vacancies and interstitial atoms in the band gap of silicon;Semiconductors;2003-04

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