Oxygen precipitates and the formation of thermal donors in silicon-Reference-Cited by-同舟云学术

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Oxygen precipitates and the formation of thermal donors in silicon

Published:1998-06 Issue:6 Volume:32 Page:640-641
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vabishchevich N. V.,Brinkevich D. I.,Prosolovich V. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187455.pdf

Reference5 articles.

1. V. P. Markevich, L. I. Murin, and A. G. Litvinenko, Fiz. Tekh. Poluprovodn. 21, 1267 (1987) [Sov. Phys. Semicond. 21, 767 (1987)].

2. V. P. Markevich and L. I. Murin, Phys. Status Solidi A 111, K149 (1989).

3. K. V. Ravi, Imperfections and Impurities in Semiconductor Silicon, Wiley, New York (1981) [Russ. trans., Mir, Moscow (1984)].

4. D. I. Brinkevich, V. P. Markevich, L. I. Murin, and V. V. Petrov, Fiz. Tekh. Poluprovodn. 26, 679 (1992) [Sov. Phys. Semicond. 26, 383 (1992)].

5. V. P. Markevich and L. I. Murin, Fiz. Tekh. Poluprovodn. 25, 262 (1991) [Sov. Phys. Semicond. 25, 158 (1991)].

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