Coefficients of capture of free excitons by shallow acceptors and donors in gallium arsenide-Reference-Cited by-同舟云学术

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Coefficients of capture of free excitons by shallow acceptors and donors in gallium arsenide

Published:2004-05 Issue:5 Volume:38 Page:543-545
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Glinchuk K. D.,Litovchenko N. M.,Strilchuk O. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1755888.pdf

Reference7 articles.

1. A. A. Lipnik, Fiz. Tverd. Tela (Leningrad) 3, 2322 (1961) [Sov. Phys. Solid State 3, 1683 (1962)].

2. D. Magde and H. Mahr, Phys. Rev. B 2, 4098 (1970).

3. V. L. Broude, I. I. Tartakovskii, and V. B. Timofeev, Fiz. Tverd. Tela (Leningrad) 14, 3531 (1972) [Sov. Phys. Solid State 14, 2971 (1972)].

4. K. D. Glinchuk and A. V. Prokhorovich, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 519 (2002) [Semiconductors 36, 487 (2002)].

5. K. D. Glinchuk and A. V. Prokhorovich, Semicond. Phys. Quantum Electron. Optoelectron. 5, 353 (2002).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs: bound exciton data;New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds;2008

2. Analysis of luminescence method for determination of Cd1-xZnxTe composition;Semiconductor physics, quantum electronics and optoelectronics;2005-10-31

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