Spin relaxation of charged centers in silicon in the presence of photocarriers (Si: Cr+, [Cr+−B−])-Reference-Cited by-同舟云学术

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Spin relaxation of charged centers in silicon in the presence of photocarriers (Si: Cr+, [Cr+−B−])

Published:2001-04 Issue:4 Volume:43 Page:635-639
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Konchits A. A.,Shanina B. D.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1365984.pdf

Reference15 articles.

1. I. Solomon, Top. Appl. Phys. 36, 190 (1979).

2. S. Depinna, B. C. Cavenett, I. G. Austin, et al., Philos. Mag. B 46(5), 473 (1982).

3. A. A. Konchits and B. D. Shanina, in Radiospectroscopy of Solid State (Naukova Dumka, Kiev, 1992).

4. J.-M. Spaeth, in Modern Application of EPR/ESR from Biophysics to Materials Science: Proceedings of the First Asia-Pacific EPR/ESR Symposium, Hong-Kong, 1997 (Springer, 1978), p. 587.

5. M. S. Brandt and M. Stutzman, Appl. Phys. Lett. 61(21), 2569 (1992).

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