Abstract
Coherent terahertz radiation has been generated in p–n heterostructures based on a-Si:H/a-SiC:H/c-Si excited by 800-nm femtosecond laser pulses at room temperature. Terahertz radiation is generated when a reverse bias voltage is applied to heterostructures. The properties of the generated terahertz radiation strongly depend on the bias voltage, which reflects the dynamics of nonequilibrium charge carriers produced by femtosecond laser pump in the heterostructure.
Subject
Physics and Astronomy (miscellaneous)
Reference26 articles.
1. B. Ferguson and X.-C. Zhang, Nat. Mater. 1, 26 (2002).
2. U. A. Abdullin, G. A. Lyakhov, O. V. Rudenko, and A. S. Chirkin, Sov. Phys. JETP 39, 633 (1974).
3. D. A. Bagdasaryan, A. O. Makaryan, and P. S. Pogosyan, JETP Lett. 37, 594 (1983).
4. D. H. Auston, K. P. Cheung, J. A. Valdmanis, and D. A. Kleinman, Phys. Rev. Lett. 53, 1555 (1984).
5. V. L. Malevich, P. A. Ziaziukia, R. Norkus, V. Pacebutas, I. Nevinskas, and A. Krotkus, Sensors 21, 4067 (2021).
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献