Weak Antilocalization Effect in an AlAs/AlGaAs Quantum Well

Author:

Shchepetilnikov A. V.,Khisameeva A. R.,Dremin A. A.,Kukushkin I. V.

Abstract

Weak antilocalization in a narrow AlAs quantum well containing a two-dimensional electron system with a large effective mass at low temperatures has been studied. Such quantum corrections are due to a strong spin–orbit coupling in it. The spin–orbit interaction constant has been determined from the approximation of experimental data by a theoretical model in the diffusion approximation. Additionally, this constant has also been independently measured from the modification of the single-particle g-factor in the quantum Hall effect regime in the same sample using electron paramagnetic resonance. Electron paramagnetic resonance spectroscopy and analysis of the weak antilocalization effect yield close values of the interaction constants β = 7.6 and 10.1 meV Å, respectively. Agreement between β values thus obtained becomes full if effects of the strong electron–electron interaction are taken into account in the weak antilocalization model by renormalizing the effective mass of the electron.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

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