Silicon passivated by two-layer insulating films of ytterbium oxide and dysprosium oxide

Author:

Rodionov M. A.,Rozhkov V. A.,Pashin A. V.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Reference6 articles.

1. M. A. Rodionov, in Proceedings of the 5th All-Russian Conference of Young Scientists on the Physics of Semiconductors and Semiconductor Opto-and Nanoelectronics, St. Petersburg, 2003, p. 111.

2. V. A. Rozhkov and M. A. Rodionov, in Proceedings of the 2nd International Scientific-Technological Conference “Physics and Engineering Applications of Wave Processes,” Samara, 2003, pp. 358–361.

3. A. L. Fahrenbruch and R. H. Bube, Fundamentals of Solar Cells (Academic Press, New York, 1987; Énergoatommash, Moscow, 1987).

4. A. V. Rzhanov, Electronic Processes on Semiconductor Surfaces (Nauka, Moscow, 1971).

5. V. G. Litovchenko and A. P. Gorban’, Fundamental Physics of Microelectronic MIS Systems (Naukova Dumka, Kiev, 1978).

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrate;Semiconductor Physics, Quantum Electronics and Optoelectronics;2018-12-03

2. Rare-earth oxide thin films for gate dielectrics in microelectronics;Journal of Alloys and Compounds;2006-07

3. Silicon Passivated by Insulating Erbium Oxide Films;Technical Physics Letters;2005

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