Tuning the energy spectrum of InAs/GaAs quantum dots by varying the thickness and composition of the thin double GaAs/InGaAs cladding layer-Reference-Cited by-同舟云学术

Tuning the energy spectrum of InAs/GaAs quantum dots by varying the thickness and composition of the thin double GaAs/InGaAs cladding layer

Published:2004-04 Issue:4 Volume:38 Page:431-436
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Karpovich I. A.,Zvonkov B. N.,Levichev S. B.,Baidus N. V.,Tikhov S. V.,Filatov D. O.,Gorshkov A. P.,Ermakov S. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1734670.pdf

Reference17 articles.

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4. B. V. Volovik, A. F. Tsatsul'nikov, D. A. Bedarev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 990 (1999) [Semiconductors 33, 901 (1999)].

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