Exciton photoluminescence in doped quasi-1D structures based on silicon-Reference-Cited by-同舟云学术

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Exciton photoluminescence in doped quasi-1D structures based on silicon

Published:2004-04 Issue:4 Volume:38 Page:461-467
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Sachenko A. V.,Korbutyak D. V.,Kryuchenko Yu. V.,Sreseli O. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1734675.pdf

Reference13 articles.

1. A. V. Sachenko and Ju. V. Kryuchenko, Semicond. Phys. Quantum Electron. Optoelectron. 3, 150 (2000).

2. A. Shik, J. Appl. Phys. 74, 2951 (1993).

3. S. I. Gubarev, I. V. Kukushkin, S. V. Tovstonog, et al., Pis'ma Zh. Éksp. Teor. Fiz. 72, 469 (2000) [JETP Lett. 72, 324 (2000)].

4. D. V. Kulakovskii, S. I. Gubarev, and Yu. E. Lozovik, Pis'ma Zh. Éksp. Teor. Fiz. 74, 123 (2001) [JETP Lett. 74, 118 (2001)].

5. M. G. Lisachenko, E. A. Konstantinova, V. Yu. Timoshenko, and P. K. Kashkarov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 344 (2002) [Semiconductors 36, 325 (2002)].

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1. Exciton states and photoluminescence in Ge quantum dots;Nanotechnology;2007-06-20

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