Liquid phase epitaxy of (Sn2)1−x (InSb)x solid solution layers-Reference-Cited by-同舟云学术

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Liquid phase epitaxy of (Sn2)1−x (InSb)x solid solution layers

Published:2002-11 Issue:11 Volume:28 Page:927-928
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Saidov A. S.,Razzakov A. Sh.,Saparov D. V.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1526886.pdf

Reference4 articles.

1. Zh. I. Alferov, M. Z. Zhingarev, S. G. Konnikov, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 16(5), 831 (1982) [Sov. Phys. Semicond. 16, 532 (1982)].

2. M. S. Saidov, A. S. Saidov, É. A. Koshchanov, and A. Sh. Razzakov, Dokl. Akad. Nauk 359(2), 188 (1998) [Dokl. Phys. 43, 169 (1998)].

3. M. Hansen and K. Anderko, Constitution of Binary Alloys (McGraw-Hill, New York, 1958; Metallurgizdat, Moscow, 1962), Vol. 2.

4. A. S. Saidov, É. A. Koshchanov, and A. Sh. Razzakov, Pis’ma Zh. Tekh. Fiz. 24(2), 12 (1998) [Tech. Phys. Lett. 24, 47 (1998)].

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1. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics;East European Journal of Physics;2023-09-04

2. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy;Semiconductors;2010-07

3. Possibility of forming continuous solid solutions of silicon and germanium with compounds with defective diamond-like structures;Applied Solar Energy;2008-12

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