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The spread of cross section for electron capture by a trap with a discrete energy level in γ-La2S3 crystals

  • Published:2001-02 Issue:2 Volume:35 Page:164-169
  • ISSN:1063-7826
  • Container-title:Semiconductors
  • language:en
  • Short-container-title:Semiconductors

Author:

Zobov E. M.,Rizakhanov M. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. S. M. Ryvkin, Photoelectric Effects in Semiconductors (Fizmatgiz, Moscow, 1962; Consultants Bureau, New York, 1964).

2. M. A. Rizakhanov and F. S. Gabibov, Fiz. Tekh. Poluprovodn. (Leningrad) 13, 1324 (1979) [Sov. Phys. Semicond. 13, 776 (1979)].

3. M. A. Rizakhanov, Yu. N. Émirov, and N. A. Abilova, Fiz. Tekh. Poluprovodn. (Leningrad) 14, 1665 (1980) [Sov. Phys. Semicond. 14, 991 (1980)].

4. M. A. Rizakhanov and E. M. Zobov, Fiz. Tekh. Poluprovodn. (Leningrad) 14, 2407 (1980) [Sov. Phys. Semicond. 14, 1429 (1980)].

5. M. A. Rizakhanov, Fiz. Tekh. Poluprovodn. (Leningrad) 16, 699 (1982) [Sov. Phys. Semicond. 16, 448 (1982)].

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