Formation of silicon carbide and diamond nanoparticles in the surface layer of a silicon target during short-pulse carbon ion implantation-Reference-Cited by-同舟云学术

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Formation of silicon carbide and diamond nanoparticles in the surface layer of a silicon target during short-pulse carbon ion implantation

Published:2009-04 Issue:4 Volume:54 Page:600-602
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Remnev G. E.,Ivanov Yu. F.,Naiden E. P.,Saltymakov M. S.,Stepanov A. V.,Shtan’ko V. F.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063784209040264.pdf

Reference9 articles.

1. A. A. Lebedev, V. V. Zelenin, and P. L. Abramov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 41, 273 (2007) [Semiconductors 41, 263 (2007)].

2. P. A. Ivanov and M. E. Levinshtein, Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 897 (2005) [Semiconductors 39, 861 (2005)].

3. R. I. Batalov, R. M. Bayazitov, and R. M. Nurutdinov, Izv. Vyssh. Uchebn. Zaved., Ser. Materialy Eelektronnoi Tekhniki, No. 1, 28 (2006).

4. N. S. Li, X. H. Wu, L. S. Liao, and X. M. Bao, Nucl. Instrum. Methods Phys. Res. B 142, 308 (1998).

5. L. T. Canham, K. G. Barraclough, and D. J. Robbins, Appl. Phys. Lett. 51, 1509 (1987).

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