Analysis of using femtosecond laser scanning system to impurity-induced disordering of InGaAsP quantum wells-Reference-Cited by-同舟云学术

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Analysis of using femtosecond laser scanning system to impurity-induced disordering of InGaAsP quantum wells

Published:2012-06-12 Issue:7 Volume:22 Page:1229-1234
ISSN:1054-660X
Container-title:Laser Physics
language:en
Short-container-title:Laser Phys.

Author:

Hsieh Chih-Hua,Jeng Jeng-Ywan,Lee San-Liang,Pan Yen-Ting

Publisher

Pleiades Publishing Ltd

Subject

Industrial and Manufacturing Engineering,Condensed Matter Physics,Instrumentation,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1134/S1054660X1207002X.pdf

Reference34 articles.

1. I. Fedotov, A. A. Lanin, V. I. Sokolov, et al., Laser Phys. Lett. 7, 657 (2010).

2. D. A. Sidorov-Biryukov, K. A. Kudinov, A. A. Podshivalov, and A. M. Zheltikov, Laser Phys. Lett. 7, 355 (2010).

3. S. M. Kobtsev, S. V. Kukarin, Y. S. Fedotov, and A. V. Ivanenko, Laser Phys. 21, 308 (2011).

4. V. M. Gordienko, A. S. Khomenko, I. A. Makarov, and V. P. Petukhov, Laser Phys. 20, 816 (2010).

5. A. Z. Freitas, L. R. Freschi, R. E. Samad, et al., Laser Phys. Lett. 7, 236 (2010).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mid-Infrared InAs/GaSb Type-II Superlattice Photodetector Arrays;Selected Topics in Photonics;2017-10-31

2. Type-II InAs/GaSb photodiode array pixel isolation by femto-second laser anneal;Infrared Physics & Technology;2016-09

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