Formation of nanocrystalline silicon films using high-dose H+ ion implantation into silicon-on-insulator layers with subsequent rapid thermal annealing-Reference-Cited by-同舟云学术

Formation of nanocrystalline silicon films using high-dose H+ ion implantation into silicon-on-insulator layers with subsequent rapid thermal annealing

Published:2004-01 Issue:1 Volume:38 Page:107-112
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Tyschenko I. E.,Popov V. P.,Talochkin A. B.,Gutakovskii A. K.,Zhuravlev K. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1641141.pdf

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