Modeling the effect of the transconductance increase in GaAs field-effect transistors-Reference-Cited by-同舟云学术

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Modeling the effect of the transconductance increase in GaAs field-effect transistors

Published:2002-10 Issue:10 Volume:47 Page:715-716
ISSN:1028-3358
Container-title:Doklady Physics
language:en
Short-container-title:Dokl. Phys.

Author:

Gergel’ V. A.,Mokerov V. G.,Zelenyi A. P.,Timofeev M. V.

Publisher

Pleiades Publishing Ltd

Subject

General Physics and Astronomy,Mechanics of Materials,Computational Mechanics

Link

http://link.springer.com/content/pdf/10.1134/1.1519312.pdf

Reference5 articles.

1. V. A. Gergel’ and V. G. Mokerov, Dokl. Akad. Nauk 375, 609 (2000) [Dokl. Phys. 45, 647 (2000)].

2. V. A. Gergel’, V. G. Mokerov, M. V. Timofeev, and Yu. V. Fedorov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 239 (2000) [Semiconductors 34, 228 (2000)].

3. T. Enoki, S. Sugitani, and Y. Yamane, IEEE Trans. Electron Device 37, 935 (1990).

4. V. A. Gergel’ and G. Yu. Khrenov, Abstracts of Reports, All-Russia Conference on Semiconductors-97 (Fiz. Inst. Akad. Nauk, Moscow, 1997), p. 137.

5. V. A. Nikolaeva, V. D. Pishchalko, V. I. Ryzhii, and G. Yu. Khrenov, Mikroélektronika 17, 504 (1988).

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