p-GaSe-n-Ga2S3 heterojunctions-Reference-Cited by-同舟云学术

p-GaSe-n-Ga2S3 heterojunctions

Published:1997-05 Issue:5 Volume:23 Page:385-385
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Kovalyuk M. Z.,Vitkovskaya V. I.,Tovarnitskii M. V.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1261689.pdf

Reference5 articles.

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2. V. L. Bakumenko and V. F. Chishko, Fiz. Tekh. Poluprovodn. 11, 2000 (1977) [Sov. Phys. Semicond. 11, 1171 (1977)].

3. V. N. Katerinchuk and M. Z. Kovalyuk, Pis’ma Zh. Tekh. Fiz. 18(12), 70 (1992) [Sov. Tech. Phys. Lett. 18, 394 (1992)].

4. M. V. Tovarinitskii, V. K. Luk’yanyuk, Z. D. Kovalyuk, V. I. Vitkovskaya, and S. Ya. Golub, Pis’ma Zh. Tekh. Fiz. 14, 2104 (1988) [Sov. Tech. Phys. Lett. 14, 914 (1988)].

5. V. I. Gavrilenko, A. M. Grekhov, D. V. Korbutyak, and G. G. Litovchenko, Optical Properties of Semiconductors [in Russian], Naukova Dumka, Kiev (1987).

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