Electrical properties of tellurium clusters on the void sublattice of an opal crystal: The important role played by the Te-SiO2 interface-Reference-Cited by-同舟云学术

Electrical properties of tellurium clusters on the void sublattice of an opal crystal: The important role played by the Te-SiO2 interface

Published:2002-09 Issue:9 Volume:44 Page:1774-1778
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Berezovets V. A.,Bogomolov V. N.,Farbshtein I. I.,Nizhankovskii V. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1507264.pdf

Reference11 articles.

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3. V. N. Bogomolov, L. M. Sorokin, D. A. Kurdyumov, et al., Fiz. Tverd. Tela (St. Petersburg) 39(11), 2090 (1997) [Phys. Solid State 39, 1869 (1997)].

4. C. M. Sotomayor Torres, T. Maka, M. Müller, et al., in Proceedings of the 8th International Symposium “Nanostrustures: Physics and Technology,” St. Petersburg, Russia, 2000, p. 224.

5. V. N. Bogomolov, L. S. Parfen’eva, I. A. Smirnov, et al., Fiz. Tverd. Tela (St. Petersburg) 44(1), 175 (2002) [Phys. Solid State 44, 181 (2002)].

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1. Quantum corrections to the resistivity of a new nanoobject, a two-dimensional layer at the “Tellurium Clusters-Opal Matrix” internal interface;Physics of the Solid State;2006-12

2. Grain Boundary Influence on the Electrical Properties of Tellurium Microstructure Ingots and Nanocluster Crystals;Materials Science Forum;2006-03