On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface-Reference-Cited by-同舟云学术

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On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface

Published:2006-03 Issue:3 Volume:40 Page:299-301
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Davydov S. Yu.,Posrednik O. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782606030080.pdf

Reference25 articles.

1. N. D. Sorokin, Yu. M. Tairov, V. F. Tsvetkov, and M. A. Chernov, Kristallografiya 28, 910 (1983) [Sov. Phys. Crystallogr. 28, 539 (1983)].

2. Yu. A. Vodakov, G. A. Lomakina, and E. N. Mokhov, Fiz. Tverd. Tela (Leningrad) 24, 1377 (1982) [Sov. Phys. Solid State 24, 780 (1982)].

3. A. A. Lebedev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 769 (1999) [Semiconductors 33, 707 (1999)].

4. R. G. Verenchikova, V. I. Sankin, and E. I. Radovanova, Fiz. Tekh. Poluprovodn. (Leningrad) 17, 1757 (1983) [Sov. Phys. Semicond. 17, 1123 (1983)].

5. S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik, and Yu. M. Tairov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 1437 (2001) [Semiconductors 35, 1375 (2001)].

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