Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride-Reference-Cited by-同舟云学术

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Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride

Published:2009-03 Issue:3 Volume:43 Page:403-409
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bobrovnikova I. A.,Ivonin I. V.,Novikov V. A.,Preobrazhenskii V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609030270.pdf

Reference22 articles.

1. S. F. Kukushkin, V. N. Bessolov, and A. V. Osipov, Fiz. Tverd. Tela 43, 2135 (2001) [Phys. Solid State 43, 2229 (2001)].

2. V. N. Bessolov, Yu. V. Zhilyaev, and E. V. Konenkova, Pis’ma Zh. Tekh. Fiz. 27(23), 66 (2001) [Tech. Phys. Lett. 27, 1010 (2001)].

3. S. Yu. Karpov, R. A. Talalaev, Yu. Makarov, J. Massies, and B. Damilano, Surf. Sci. 450, 191 (2000).

4. R. Shechar and K. F. Jensen, Surf. Sci. 381, 161 (1997).

5. I. A. Bobrovnikova and I. V. Ivonin, Izv. Vyssh. Uchebn. Zaved., Ser. Fiz. 46(6), 44 (2003).

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1. Improving the functional characteristics of gallium nitride during vapor phase epitaxy;Semiconductors;2016-12

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