Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of Cd x Hg1 − x Te-Reference-Cited by-同舟云学术

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Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of Cd x Hg1 − x Te

Published:2012-03 Issue:3 Volume:46 Page:293-297
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Aliev S. A.,Zulfigarov E. I.,Selim-zade R. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782612030025.pdf

Reference14 articles.

1. B. L. Gelmont and M. I. D’yakonov, Sov. Phys. JETP 35, 377 (1972).

2. A. Manger, S. Otmezguines, C. Verit, and J. Frildel, Phys. Rev. 12, 2412 (1975).

3. B. L. Gelmont, Sov. Phys. Semicond. 9, 1257 (1975).

4. M. A. Mekhtiev, Izv. AN AzSSR, Ser. Fiz.-Tekh. Mat. Nauk, No. 4, 412 (1975).

5. M. A. Mekhtiev and V. A. Kalina, Izv. AN AzSSR, Ser. Fiz.-Tekh. Mat. Nauk, No. 2, 68 (1982).

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