Critical thickness for the Stranski-Krastanov transition treated with the effect of segregation-Reference-Cited by-同舟云学术

Critical thickness for the Stranski-Krastanov transition treated with the effect of segregation

Published:2008-05 Issue:5 Volume:42 Page:563-570
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Yurasov D. V.,Drozdov Yu. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608050138.pdf

Reference34 articles.

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2. N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, et al., Fiz. Tekh. Poluprovodn. 32, 385 (1998) [Semiconductors 32, 343 (1998)].

3. O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskiĭ, et al., Fiz. Tekh. Poluprovodn. 34, 1281 (2000) [Semiconductors 34, 1229 (2000)].

4. Nano-Optoelectronics, Concepts, Physics and Devices, Ed. by M. Grudman (Springer, Berlin, 2002).

5. Semiconductor Quantum Dots. Physics, Spectroscopy and Applications, Ed. by Y. Masumoto and T. Takagahara (Springer, Berlin, 2002).

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